Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2023, 14, 834–849, doi:10.3762/bjnano.14.68

• , Luxembourg Thermo Fisher Scientific, Hillsboro, OR, 97124, USA 10.3762/bjnano.14.68 Abstract Ion beam processes related to focused ion beam milling, surface patterning, and secondary ion mass spectrometry require precision and control. Quality and cleanliness of the sample are also crucial factors

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2022, 13, 986–1003, doi:10.3762/bjnano.13.86

• ; molecular dynamics; silicon; simulations; water; Introduction Focused ion beams (FIB) play an increasingly important role in materials research areas such as nanoanalysis (e.g., secondary ion mass spectrometry (SIMS) [1][2][3] and sample preparation for transmission electron microscopy (TEM) [4], atom

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• with neon, sputtering at higher rates is made possible while retaining a small probe size. This has also opened the door to in situ materials analysis in the HIM using secondary ion mass spectrometry [8]. Further forms of materials analysis using the HIM include techniques based on the collection of

Mapping the local dielectric constant of a biological nanostructured system

• Wescley Walison Valeriano,
• Rodrigo Ribeiro Andrade,
• Juan Pablo Vasco,
• Angelo Malachias,
• Bernardo Ruegger Almeida Neves,
• Paulo Sergio Soares Guimarães and
• Wagner Nunes Rodrigues

Beilstein J. Nanotechnol. 2021, 12, 139–150, doi:10.3762/bjnano.12.11

• ion mass spectrometry (TOF-SIMS), Carr et al. [18] concluded that the wing layers consist of mostly chitin with an alternating content of melanin. Chitin forms the structure and melanin modulates the relative permittivity along the cross section. From the results shown in Figure 7, we can see that, in

• regions are the thickness and the number of layers. Each multilayered structure is wrapped by a wax layer, which is the irregular region at the boundary of the wings in the maps of Figure 6, and as a valley in the relative permittivity profile with εr(wax) ≈ 4 in Figure 7. Using time-of-flight secondary

Bio-imaging with the helium-ion microscope: A review

• Matthias Schmidt,
• James M. Byrne and
• Ilari J. Maasilta

Beilstein J. Nanotechnol. 2021, 12, 1–23, doi:10.3762/bjnano.12.1

• secondary ion mass spectrometry (SIMS) or ionoluminescence with the HIM, also offer the possibility for new and exciting research on biological materials. In this review, we present a comprehensive overview of almost all currently published literature which has demonstrated the application of HIM for

• current are changed. Figure 3 illustrates how the variation of the dwell time of the ion beam on a pixel influences the brightness of the image if the flooding parameters are kept constant. Similar results can be obtained when the flood time is varied at a constant dwell time. Secondary ion mass

• spectrometry (SIMS) A major disadvantage of using standard HIM rather than SEM is the lack of analytical detectors for elemental quantification, such as EDX. This is because 30 keV helium ions cannot transfer enough energy to the bound inner-shell electrons of the sample to excite them out of the core states

Scanning transmission imaging in the helium ion microscope using a microchannel plate with a delay line detector

• Eduardo Serralta,
• Nico Klingner,
• Olivier De Castro,
• Michael Mousley,
• Santhana Eswara,
• Serge Duarte Pinto,
• Tom Wirtz and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2020, 11, 1854–1864, doi:10.3762/bjnano.11.167

• studied by detecting the light emitted from the sample during ion bombardment [8][9][10]. Moreover, compositional analyses using secondary ion mass spectrometry (SIMS) can be performed in the HIM with a lateral resolution of the order of 10 nm [11][12][13][14]. Transmission-mode imaging can further

Helium ion microscope – secondary ion mass spectrometry for geological materials

• Matthew R. Ball,
• Richard J. M. Taylor,
• Joshua F. Einsle,
• Fouzia Khanom,
• Christelle Guillermier and
• Richard J. Harrison

Beilstein J. Nanotechnol. 2020, 11, 1504–1515, doi:10.3762/bjnano.11.133

• well as practicalities for geological sample analyses of Li alongside a discussion of potential geological use cases of the HIM–SIMS instrument. Keywords: geoscience; helium ion microscopy (HIM); lithium; secondary ion mass spectrometry (SIMS); Introduction The helium ion microscope (HIM) is a

• several suggestions for the possibility of microanalysis on the HIM, the most common of these being Rutherford backscattered ion imaging (RBI) and secondary ion mass spectrometry (SIMS) [7][8][9]. However, the variation of RBI intensity with changing surface chemistry, specifically the atomic number, Z

• , leaving true geological variation as a possible cause. Conclusion The helium ion microscope provides an imaging tool with extreme spatial resolution using secondary electron imaging. With the addition of secondary ion mass spectrometry capabilities at the highest resolution, the HIM–SIMS is now set to

Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• . Time-of-flight secondary ion mass spectrometry (TOF-SIMS) measurements were carried out in a TOF-SIMS 5 device (ION-TOF GmbH, Münster, Germany). The spectrometry was performed in static SIMS mode (primary ion beam dose < 2 × 1011 ions/cm2) with Bi3+ primary ions at 25 keV. Spectra were calibrated on

Scanning probe microscopy for energy-related materials

• Rüdiger Berger,
• Benjamin Grévin,
• Philippe Leclère and
• Yi Zhang

Beilstein J. Nanotechnol. 2019, 10, 132–134, doi:10.3762/bjnano.10.12

• major topic in our daily life. Jonathan Op de Beeck and co-workers identify the ionic processes occurring inside Li-ion composites in order to understand the impact on the entire battery cell [9]. In particular, the authors combine cAFM and secondary-ion mass spectrometry to correlate the presence of

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• the Si substrate. MLD-doped 66 nm SOI was further examined using secondary ion mass spectrometry (SIMS) to attain a more detailed view of total dopant distribution in the substrate, which is complementary to previous measurements of active carrier concentrations through ECV. Data shown in Figure 7

• under neutral conditions. Controlled-voltage etching was carried out with step widths of 2–5 nm. Secondary ion mass spectrometry data was acquired on a Phi Adept 1010 using a 0.5–1.0 keV Cs+ bombardment with negative ion detection. X-ray photoelectron spectroscopy XPS spectra were acquired on an Oxford

• under inert conditions. Secondary ion mass spectrometry analysis of a P-MLD-doped 66 nm silicon on insulator substrate. Blue line: P concentration, red line: O concentration. Hall effect data of 66 nm and 13 nm MLD-doped SOI. Supporting Information Comprehensive Hall effect analysis data and ECV of

Defect formation in multiwalled carbon nanotubes under low-energy He and Ne ion irradiation

• Santhana Eswara,
• Jean-Nicolas Audinot,
• Brahime El Adib,
• Maël Guennou,
• Tom Wirtz and
• Patrick Philipp

Beilstein J. Nanotechnol. 2018, 9, 1951–1963, doi:10.3762/bjnano.9.186

• secondary ion mass spectrometry experiments as described elsewhere, which leads to a modified octagon and pole-pieces [59]. The bright-field (BF) TEM images were recorded in the He+ and Ne+ craters using Gatan on-axis CCD camera with 2k × 2k pixel array (Figure 8). Raman spectroscopy was done prior to TEM

Nanoscale electrochemical response of lithium-ion cathodes: a combined study using C-AFM and SIMS

• Jonathan Op de Beeck,
• Nouha Labyedh,
• Alfonso Sepúlveda,
• Valentina Spampinato,
• Alexis Franquet,
• Thierry Conard,
• Philippe M. Vereecken,
• Wilfried Vandervorst and
• Umberto Celano

Beilstein J. Nanotechnol. 2018, 9, 1623–1628, doi:10.3762/bjnano.9.154

• established nanoscale analysis techniques namely conductive atomic force microscopy (C-AFM) and secondary ion mass spectrometry (SIMS). We present a platform to study Li-ion composites with nanometer resolution that allows one to sense a multitude of key characteristics including structural, electrical and

• indicated. Keywords: all-solid-state microbatteries (ASB); conductive atomic force microscopy (C-AFM); Li-ion kinetics; secondary ion mass spectrometry (SIMS); 3D thin-film batteries; Findings Conventional Li-ion battery technology is undergoing continuous improvements in order to fulfil the increasing

• conductive atomic force microscopy (C-AFM) and secondary ion mass spectrometry (SIMS). As model systems, we focus on LiMn2O4 (LMO) as cathode material [7] deposited by wet electrodeposition (thickness 260 nm) and RF-sputtered (thickness 100 nm) and compare their properties on a local (sub-100 nm) scale. In

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• measurements were post-annealed in the same furnace in pure H2 gas at 450 °C for 1 h to enable the passivation of dangling bond defects [18]. For electrical measurements, MOS capacitors were processed by thermal evaporation of Al-contacts. Molecular Cs+ secondary ion mass spectrometry (MCs+-SIMS [19]; Cameca

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• distribution as in [26]. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) investigation of the compositional depth profile of the CeO2/TiN/Si and CeO2/Si structures has been performed by means of a Cs+ ion beam (energy of 0.5 keV, ion current 38.0 nA) sputtering a 200 μm × 200 μm area, and a Ga+ ion

Ta₂N₃ nanocrystals grown in Al₂O₃ thin layers

• Krešimir Salamon,
• Maja Buljan,
• Iva Šarić,
• Mladen Petravić and
• Sigrid Bernstorff

Beilstein J. Nanotechnol. 2017, 8, 2162–2170, doi:10.3762/bjnano.8.215

• magnetron deposition at room temperature and characterized using grazing incidence small-angle X-ray scattering (GISAXS), X-ray reflectivity (XRR), grazing incidence X-ray diffraction (GIXRD), secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS). We found amorphous tantalum

• nitride NPs with the processing parameters of the films. For this purpose we used complimentary and well-established characterization techniques such as X-ray reflectivity (XRR), grazing incidence small-angle X-ray scattering (GISAXS), grazing incidence X-ray diffraction (GIXRD), secondary ion mass

• spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS). Experimental The films were grown as periodic multilayers by using the magnetron sputter deposition system KJLC CMS-18. In order to obtain tantalum nitride, the depositions were carried out in a reactive atmosphere containing 20% N2 and 80% Ar

Application of visible-light photosensitization to form alkyl-radical-derived thin films on gold

• Rashanique D. Quarels,
• Xianglin Zhai,
• Neepa Kuruppu,
• Jenny K. Hedlund,
• Ashley A. Ellsworth,
• Amy V. Walker,
• Jayne C. Garno and
• Justin R. Ragains

Beilstein J. Nanotechnol. 2017, 8, 1863–1877, doi:10.3762/bjnano.8.187

• irradiation all proved necessary for the deposition of robust films that could survive nanoshaving. In addition to characterizations with AFM, grazing angle infrared reflectance–absorbance spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (TOF SIMS

• energy of 23.5 eV and energy step 0.125 eV, and collected at 45° to the normal of the sample surface. The binding energies (EB) were calibrated using the Au 4f7/2 photoelectron peak (EB = 84.00 eV). Time-of-flight secondary ion mass spectrometry (TOF SIMS): Time-of-flight secondary ion mass spectra were

Collembola cuticles and the three-phase line tension

• Håkon Gundersen,
• Hans Petter Leinaas and
• Christian Thaulow

Beilstein J. Nanotechnol. 2017, 8, 1714–1722, doi:10.3762/bjnano.8.172

• al demonstrated a lipid layer (epicuticular wax) covering all parts of the Collembola cuticle, using time-of-flight secondary ion mass spectrometry [30]. A lipophilic dye, such as Nile Red, will bind to any part of such a layer it came into contact with, thus staining the part of a surface wetted by

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

• Ann-Kathrin Kleinschmidt,
• Lars Barzen,
• Johannes Strassner,
• Christoph Doering,
• Henning Fouckhardt,
• Wolfgang Bock,
• Michael Wahl and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171

• multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS) reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for

• accuracy in etch depth control with RAS, which until now had been estimated only in our earlier publications [8][9], is demonstrated. Different etch depths have been monitored during etching of layered samples and the results are compared to secondary ion mass spectrometry (SIMS) measurements of the

• investigated by secondary ion mass spectrometry (SIMS), using a TOF–SIMS IV instrument from ION-TOF GmbH, Muenster, Germany. Applying the so-called dual beam depth profiling technique with 2 keV Cs+ as sputter ions and 20 keV Bi3+ as analysis ions, the thickness of the sputtered Al0.5Ga0.5As (i.e., Al

Numerical investigation of depth profiling capabilities of helium and neon ions in ion microscopy

• Patrick Philipp,
• Lukasz Rzeznik and
• Tom Wirtz

Beilstein J. Nanotechnol. 2016, 7, 1749–1760, doi:10.3762/bjnano.7.168

• specifically secondary ion mass spectrometry (SIMS), analysis of organic samples by sputtering is also one important field of applications and the kind of damage mentioned for previous applications remains the same. However, for depth profiling applications of polymers [19] and biological samples [20

• Patrick Philipp Lukasz Rzeznik Tom Wirtz Advanced Instrumentation for Ion Nano-Analytics (AINA), MRT Department, Luxembourg Institute of Science and Technology (LIST), 41 rue du Brill, L-4422 Belvaux, Luxembourg 10.3762/bjnano.7.168 Abstract The analysis of polymers by secondary ion mass

• spectrometry (SIMS) has been a topic of interest for many years. In recent years, the primary ion species evolved from heavy monatomic ions to cluster and massive cluster primary ions in order to preserve a maximum of organic information. The progress in less-damaging sputtering goes along with a loss in

Nanoanalytics for materials science

• Thilo Glatzel and
• Tom Wirtz

Beilstein J. Nanotechnol. 2016, 7, 1674–1675, doi:10.3762/bjnano.7.159

• sensors for both nanoindentation and depth sensing is presented by Cinar and co-workers [2]. Furthermore, Fleming et al. present an in situ combination of atomic force microscopy (AFM) and secondary ion mass spectrometry (SIMS) [3]. By doing so, they obtain high-resolution 3D elemental/chemical maps. This

Experimental and simulation-based investigation of He, Ne and Ar irradiation of polymers for ion microscopy

• Lukasz Rzeznik,
• Yves Fleming,
• Tom Wirtz and
• Patrick Philipp

Beilstein J. Nanotechnol. 2016, 7, 1113–1128, doi:10.3762/bjnano.7.104

• Lukasz Rzeznik Yves Fleming Tom Wirtz Patrick Philipp Advanced Instrumentation for Ion Nano-Analytics (AINA), MRT Department, Luxembourg Institute of Science and Technology (LIST), 41 rue du Brill, L-4422 Belvaux, Luxembourg 10.3762/bjnano.7.104 Abstract Secondary ion mass spectrometry (SIMS) on

• . Keywords: Helium ion microscopy; irradiation; polymers; preferential sputtering; secondary ion mass spectrometry; simulations; Introduction Progress in materials and life sciences requires sample characterisation with high lateral resolution and high sensitivity. A technique which allows for both is

• secondary ion mass spectrometry (SIMS). Combined with a high-resolution mass spectrometer, mass interferences can be avoided and isotopes and small cluster ions identified unambiguously. These properties have been used since the early days of SIMS for imaging applications [1]. On the Cameca NanoSIMS, which

Orthogonal chemical functionalization of patterned gold on silica surfaces

• Francisco Palazon,
• Didier Léonard,
• Thierry Le Mogne,
• Francesca Zuttion,
• Céline Chevalier,
• Magali Phaner-Goutorbe,
• Éliane Souteyrand,
• Yann Chevolot and
• Jean-Pierre Cloarec

Beilstein J. Nanotechnol. 2015, 6, 2272–2277, doi:10.3762/bjnano.6.233

• orthogonality of the functionalization (i.e., selective grafting of the thiol on the gold areas and the silane on the silica) was demonstrated by X-ray photoelectron spectroscopy (XPS) as well as time-of-flight secondary ion mass spectrometry (ToF–SIMS) mapping. The orthogonal functionalization was used to

Peptide-equipped tobacco mosaic virus templates for selective and controllable biomineral deposition

• Klara Altintoprak,
• Axel Seidenstücker,
• Alexander Welle,
• Sabine Eiben,
• Petia Atanasova,
• Nina Stitz,
• Alfred Plettl,
• Joachim Bill,
• Hartmut Gliemann,
• Holger Jeske,
• Dirk Rothenstein,
• Fania Geiger and
• Christina Wege

Beilstein J. Nanotechnol. 2015, 6, 1399–1412, doi:10.3762/bjnano.6.145

• viruses from suspensions to the wafer substrates did not reduce the objects' height. This indicated the formation of a rigid composite not radially compressed upon its surface adsorption. ToF-SIMS analysis of the deposited material An analysis of the deposited materials with time-of-flight secondary ion

• mass spectrometry (ToF-SIMS) [90] was performed on air-dried, drop cast suspensions of TMVwt or TMV–KD10 particles (both with and without 10 days of exposure to TEOS). Positive and negative secondary ion spectra were recorded from random positions of the TMV deposits. The peak assignment is based on

Heterometal nanoparticles from Ru-based molecular clusters covalently anchored onto functionalized carbon nanotubes and nanofibers

• Deborah Vidick,
• Xiaoxing Ke,
• Michel Devillers,
• Claude Poleunis,
• Arnaud Delcorte,
• Pietro Moggi,
• Gustaaf Van Tendeloo and
• Sophie Hermans

Beilstein J. Nanotechnol. 2015, 6, 1287–1297, doi:10.3762/bjnano.6.133

• proof was obtained by secondary ion mass spectrometry (SIMS) by comparison with non-functionalized carbon samples, but also by reacting model compounds in solution and crystallizing the products to solve their crystal structure, confirming the hypothesis [52]. Indeed, clusters 1–9 are anchored on the

• rather than chelating phosphine ligands. It is also known that Au atoms in clusters actually behave more as ligands than as part of the cluster core [53]. SIMS characterization of anchored species Cluster 4 anchored on CNF–PPh2, MWNTox and MWNT–PPh2 was characterized by secondary ion mass spectrometry

Scanning reflection ion microscopy in a helium ion microscope

• Yuri V. Petrov and
• Oleg F. Vyvenko

Beilstein J. Nanotechnol. 2015, 6, 1125–1137, doi:10.3762/bjnano.6.114

• were examined in the field of material science [15][17][18][19][20][21][22][23] as well as in biology [15][16][24][25][26]. Different techniques such as secondary electron energy filtering [27], helium ion channeling contrast [28][29][30], helium ion transmission microscopy [31], secondary ion mass

• spectrometry [32][33], and ionoluminescence [34][35] were developed. In this paper we report on the development of the instrumentation and the analysis of the capabilities and limitations of scanning reflection ion microscopy (RIM) in a helium ion microscope. In the experimental part of our work we describe a